| PART |
Description |
Maker |
| 2N7002KTB |
60V N-Channel Enhancement Mode MOSFET - ESD Protected
|
Pan Jit International Inc.
|
| RFG60P06E |
60A/ 60V/ 0.030 Ohm/ ESD Rated/ P-Channel Power MOSFET
60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET
|
Fairchild Semiconductor
|
| HIP0061 HIP0061AS1 HIP0061AS2 |
60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array
60V/ 3.5A/ 3-Transistor Common Source ESD Protected Power MOSFET Array
60V 3.5A 3-Transistor Common Source ESD Protected Power MOSFET Array
|
INTERSIL[Intersil Corporation]
|
| HUF76437P3 HUF76437S3S HUF76437S3ST |
64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Dual Differential Drivers and Receivers With /-15-kV IEC ESD Protection 16-SO -40 to 85 71 A, 60 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| IRKE9104 IRKE9105 C9104 |
New ADD-A-pak Power Modules(ADD-A-pak 功率模块(单个二极)
New ADD-A-pak Power Modules(??ADD-A-pak ???妯″?(??釜浜??绠?)
New ADD-A-pak Power Modules(??ADD-A-pak ???妯″?(涓や釜浜??绠??遍???)
|
International Rectifier
|
| FDD5353 |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ
N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
|
Fairchild Semiconductor, Corp.
|
| IRFP044 |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)
|
International Rectifier
Power MOSFET
|
| IRFZ48V IRFZ48VPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A)
|
IRF[International Rectifier]
|
| IRFP064 |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=60V, Rds(on)=0.009ohm, Id=70*A)
|
IRF[International Rectifier]
Power MOSFET
|
